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Título:
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Effect of total pressure on the formation and size evolution of silicon quantum dots in silicon nitride films
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Autores:
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Rezgui, B. ;
Sibai, A. ;
Nychyporuk, T. ;
Lemiti, M. ;
Bremond, G. ;
Maestre Varea, David ;
Palais, O.
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Tipo de documento:
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texto impreso
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Editorial:
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Amer Inst Physics, 2010-05-03
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Dimensiones:
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application/pdf
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Nota general:
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info:eu-repo/semantics/openAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Física de materiales
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Materia = Ciencias: Física: Física del estado sólido
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Tipo = Artículo
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Resumen:
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The size of silicon quantum dots (Si QDs) embedded in silicon nitride (SiN(x)) has been controlled by varying the total pressure in the plasma-enhanced chemical vapor deposition (PECVD) reactor. This is evidenced by transmission electron microscopy and results in a shift in the light emission peak of the quantum dots. We show that the luminescence in our structures is attributed to the quantum confinement effect. These findings give a strong indication that the quality (density and size distribution) of Si QDs can be improved by optimizing the deposition parameters which opens a route to the fabrication of an all-Si tandem solar cell.
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En línea:
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https://eprints.ucm.es/44879/1/MaestreD%2003%20LIBRE.pdf
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