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Título:
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Effect of Er dopant in GaSb bulk crystals grown by vertical Bridgman technique
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Autores:
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Plaza, J. L. ;
Hidalgo Alcalde, Pedro ;
Méndez Martín, Bianchi ;
Piqueras de Noriega, Javier ;
Castaño, J. L. ;
Dieguez, E.
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Tipo de documento:
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texto impreso
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Editorial:
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Elsever science BV, 1999-03
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Dimensiones:
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application/pdf
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Nota general:
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info:eu-repo/semantics/openAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Física de materiales
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Tipo = Artículo
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Resumen:
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The distribution of Er in bulk GaSb ingots grown by vertical Bridgman technique has been investigated for different concentrations. The resistivity, mobility and carrier density were analysed. The formation of Er-Sb compounds and the incorporation of Er at subgrain boundaries has been shown by cathodoluminescence studies.
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En línea:
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https://eprints.ucm.es/id/eprint/24710/1/MendezBianchi51.pdf
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