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Título:
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Impurity segregation in Al doped GaSb studied by cathodoluminescence microscopy
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Autores:
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Hidalgo Alcalde, Pedro ;
Méndez Martín, Bianchi ;
Piqueras de Noriega, Javier ;
Dutta, P. S.
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Tipo de documento:
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texto impreso
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Editorial:
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Materials Research Society, 1998
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Física de materiales
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Tipo = Sección de libro
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Resumen:
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Cathodoluminescence (CL) in the scanning electron microscope (SEM) has been used to investigate the effect of doping with an isoelectronic dopant, aluminum, on the native accepters and on the general structure of extended defects of gallium antimonide single crystals. While there is no significant change in the native defect content, decoration of non-radiative recombination centers or extended defects occurs as a result of aluminum doping.
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