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Título:
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Hydrogenated amorphous silicon deposited by high pressure sputtering for HIT solar cells
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Autores:
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Mártil de la Plaza, Ignacio ;
García Hemme, Eric ;
García Hernansanz, Rodrigo ;
González Díaz, Germán ;
Olea Ariza, Javier ;
Prado Millán, Álvaro del
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Tipo de documento:
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texto impreso
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Editorial:
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IEEE, 2013
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Dimensiones:
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application/pdf
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Nota general:
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info:eu-repo/semantics/openAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Electricidad
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Materia = Ciencias: Física: Electrónica
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Tipo = Sección de libro
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Resumen:
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Hydrogenated amorphous silicon thin films were deposited using a high pressure sputtering (HPS) system. In this work, we have studied the composition and optical properties of the films (band-gap, absorption coefficient), and their dependence with the deposition parameters. For films deposited at high pressure (1 mbar), composition measurements show a critical dependence of the purity of the films with the RF power. Films manufactured with RF-power above 80W exhibit good properties for future application, similar to the films deposited by CVD (Chemical Vapor Deposition) for hydrogenated amorphous silicon.
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En línea:
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https://eprints.ucm.es/id/eprint/25781/1/Martil%2C06.pdf
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