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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Dueñas, S. ; Peláez, R. ; Castán, E. ; Barbolla, J. | Materials Research Society | 1998We have obtained Al/SiNx:H/Si and Al/SiNx:H/InP Metal-Insulator-Semiconductor devices by directly depositing silicon nitride thin films on silicon and indium phosphide wafers by the Electron Cyclotron Resonance Plasma method at 200 degrees C. Th[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; García, S. ; Martín Pacheco, Jaime Miguel ; Castán, E. ; Dueñas, S. | American Institute of Physics | 1995-11-01Current-voltage, small-signal measurements, and deep-level transient spectroscopy (DLTS) spectra of p-n junctions made by Mg implantation into undoped InP are described. The I-V characteristics show that the dominant conduction mechanism at forw[...]texto impreso
González Díaz, Germán ; Martín, J.M. ; Barbolla, J. ; Castán, E. ; Dueñas, S. ; Pinacho, R. ; Quintanilla, L. | American Institute of Physics | 1997-04-01In this work, we investigate the deep levels present in ion implanted and rapid thermal annealed (RTA) InP p(+)-n junctions. The samples were implanted with magnesium or coimplanted with magnesium and phosphorus. These levels were characterized [...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; García, S. ; Castán, E. ; Dueñas, S. ; Fernández, M. | American Institute of Physics | 1998-01-01We have analyzed the electrical properties and bonding characteristics of SiNx:H thin films deposited at 200 degrees C by the electron cyclotron resonance plasma method. The films show the presence of hydrogen bonded to silicon (at the films wit[...]texto impreso
Pérez, E. ; Dueñas, S. ; Castán, H. ; García, H. ; Bailón, L. ; Montero, Daniel ; García Hernansanz, Rodrigo ; García Hemme, Eric ; Olea Ariza, Javier ; González Díaz, Germán | American Institute of Physics | 2015-12-28The energy levels created in supersaturated n-type silicon substrates with titanium implantation in the attempt to create an intermediate band in their band-gap are studied in detail. Two titanium ion implantation doses (1013 cm-2 and 1014 cm-2)[...]texto impreso
Pérez, E. ; Castán, H. ; García, H. ; Dueñas, S. ; Bailón, L. ; Montero Álvarez, Daniel ; García-Hernansanz, R. ; García Hemme, Eric ; Olea Ariza, Javier ; González Díaz, Germán | American Institute of Physics | 2015-01In the attempt to form an intermediate band in the bandgap of silicon substrates to give it the capability to absorb infrared radiation, we studied the deep levels in supersaturated silicon with titanium. The technique used to characterize the e[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Barbolla, J. ; Castán, E. ; Dueñas, S. ; Peláez, R. ; Pinacho, R. ; Quintanilla, L. | Amer Inst Physics | 1997-08-11Room temperature conductance transients in the SiNx:H/Si interface are reported. Silicon nitride thin films were directly deposited on silicon by the low temperature electron-cyclotron-resonance plasma method. The shape of the conductance transi[...]texto impreso
González Díaz, Germán ; García Hemme, Eric ; Olea Ariza, Javier ; Pastor Pastor, David ; Bailón, L. ; Castán, H. ; Dueñas, S. ; García, H. ; Pérez, E. | American Institute of Physics | 2013-01-14Intermediate band formation on silicon layers for solar cell applications was achieved by titanium implantation and laser annealing. A two-layer heterogeneous system, formed by the implanted layer and by the un-implanted substrate, was formed. I[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; García, S. ; Castán, E. ; Dueñas, S. ; Fernández, M. | American Institute of Physics | 1998-01-01We have obtained Al/SiNx:H/InP metal-insulator-semiconductor devices depositing SiNx:H thin films by the electron cyclotron resonance plasma method at 200 degrees C. The electrical properties of the structures were analyzed according to capacita[...]
