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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Dueñas, S. ; Peláez, R. ; Castán, E. ; Barbolla, J. | Materials Research Society | 1998We have obtained Al/SiNx:H/Si and Al/SiNx:H/InP Metal-Insulator-Semiconductor devices by directly depositing silicon nitride thin films on silicon and indium phosphide wafers by the Electron Cyclotron Resonance Plasma method at 200 degrees C. Th[...]texto impreso
González Díaz, Germán ; Martín, J.M. ; Barbolla, J. ; Castán, E. ; Dueñas, S. ; Pinacho, R. ; Quintanilla, L. | American Institute of Physics | 1997-04-01In this work, we investigate the deep levels present in ion implanted and rapid thermal annealed (RTA) InP p(+)-n junctions. The samples were implanted with magnesium or coimplanted with magnesium and phosphorus. These levels were characterized [...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Barbolla, J. ; Castán, E. ; Dueñas, S. ; Peláez, R. ; Pinacho, R. ; Quintanilla, L. | Amer Inst Physics | 1997-08-11Room temperature conductance transients in the SiNx:H/Si interface are reported. Silicon nitride thin films were directly deposited on silicon by the low temperature electron-cyclotron-resonance plasma method. The shape of the conductance transi[...]
