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Título:
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Deformation-induced defect levels in ZeSe crystals
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Autores:
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Fernández Sánchez, Paloma ;
Piqueras de Noriega, Javier ;
Urbieta Quiroga, Ana Irene ;
Rebane, Y. T. ;
Shrete, Y.
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Tipo de documento:
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texto impreso
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Editorial:
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IOP publishing ltd, 1999-05
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Dimensiones:
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application/pdf
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Nota general:
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info:eu-repo/semantics/restrictedAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Física de materiales
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Tipo = Artículo
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Resumen:
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The influence of defects, in particular the deformation-induced defects, on the luminescence of bulk ZnSe single crystals has been investigated by cathodoluminescence (CL) in the scanning electron microscope. Deformation has been found to cause a reduction of the total CL intensity of the sample. CL images of deformed samples reveal dark slip bands. The CL spectrum of an undeformed crystal shows the near-band-edge emission at 2.8 eV and a broad band peaked at 2.2 eV with a shoulder at about 2 eV. Deformation at low strain causes only slight spectral changes while in a heavily deformed crystal a strong relative enhancement of the deep level band in the range 2-2.2 eV is observed. The relation of these spectral changes to the deformation-induced defects is discussed. The infrared spectra show the existence of broad bands at 0.95 and 1.27 eV. However, these emissions were found to be rather insensitive to deformation.
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En línea:
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https://eprints.ucm.es/id/eprint/26362/1/PiquerasJ179.pdf
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