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Varela del Arco, M. ; Gómez, Víctor J. ; Grandal, Javier ; Núñez Cascarejo, Arántzazu ; Naranjo, Fernando B. ; Sánchez García, M. A. ; Calleja, E. | American Institute of Physics | 2018-10This work studies the effect of four different types of buffer layers on the structural and optical properties of InGaN layers grown on Si(111) substrates and their correlation with electrical characteristics. The vertical electrical conduction [...]texto impreso
González Díaz, Germán ; Artús, L. ; Calleja, E. ; Cuscó, R. ; Iborra, E. ; Jiménez, J. ; Pastor, D. ; Peiró, F. | American Institute of Physics | 2006-08-15We have studied the effects of rapid thermal annealing at 1300 degrees C on GaN epilayers grown on AlN buffered Si(111) and on sapphire substrates. After annealing, the epilayers grown on Si display visible alterations with craterlike morphology[...]
