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The effect of substrate on high-temperature annealing of GaN epilayers: Si versus sapphire

González Díaz, Germán ; Artús, L. ; Calleja, E. ; Cuscó, R. ; Iborra, E. ; Jiménez, J. ; Pastor, D. ; Peiró, F. | American Institute of Physics | 2006-08-15

We have studied the effects of rapid thermal annealing at 1300 degrees C on GaN epilayers grown on AlN buffered Si(111) and on sapphire substrates. After annealing, the epilayers grown on Si display visible alterations with craterlike morphology[...]

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