Título:
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Local distribution of deep centers in GaP studied by infrared cathodoluminescence
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Autores:
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Domínguez-Adame Acosta, Francisco ;
Piqueras de Noriega, Javier ;
Fernández Sánchez, Paloma
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Tipo de documento:
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texto impreso
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Editorial:
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Amer Inst Physics, 1991-01-21
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Dimensiones:
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application/pdf
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Nota general:
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info:eu-repo/semantics/openAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Física de materiales
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Tipo = Artículo
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Resumen:
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Near-infrared cathodoluminescence (CL) in the scanning electron microscope has been used to characterize GaP:S. Spectra of as-grown crystals show a broadband at about 1240 nm, probably related to P(Ga) antisite defects. This emission has been found to be higher at dislocations giving a CL image opposite to the visible CL image.
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En línea:
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https://eprints.ucm.es/id/eprint/27035/1/PiquerasJ276libre.pdf
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