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Título:
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Spatial distribution of vacancy defects in GaP wafers
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Autores:
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Domínguez-Adame Acosta, Francisco ;
Piqueras de Noriega, Javier ;
De Diego, N. ;
LLopis, J.
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Tipo de documento:
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texto impreso
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Editorial:
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American Institute of Physics, 1988-04-15
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Dimensiones:
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application/pdf
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Nota general:
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info:eu-repo/semantics/openAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Física de materiales
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Tipo = Artículo
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Resumen:
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Cathodoluminescencescanning electron microscopy and positron annihilation techniques have been used to investigate the distribution of defects in GaP wafers. The results show the existence of a gradient of the concentration of vacancy?type defects along the wafer diameter, which causes inhomogeneity in the emission. Dislocation density and vacancy concentration profiles have been compared.
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En línea:
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https://eprints.ucm.es/id/eprint/27126/1/PiquerasJ292libre.pdf
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