Título:
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Structural, electrical, and optical properties of CuGaSe2 rf sputtered thin films
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Autores:
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Mártil de la Plaza, Ignacio ;
González Díaz, Germán ;
Sánchez Quesada, Francisco ;
Santamaría Sánchez-Barriga, Jacobo
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Tipo de documento:
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texto impreso
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Editorial:
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American Institute of Physics, 1990-06-01
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Dimensiones:
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application/pdf
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Nota general:
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info:eu-repo/semantics/openAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Electricidad
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Materia = Ciencias: Física: Electrónica
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Tipo = Artículo
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Resumen:
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Thin films of CuGaSe2 have been produced by rf sputtering. Compositional, structural, electrical, and optical properties are strongly influenced by growthtemperature. At substrate temperatures lower than 300?°C amorphous or poorly crystalline Se?excess films are obtained, showing high resistivity (?103 ??cm) and optical transitions at 1.62, 1.80, and 2.4 eV (values lower than the single?crystal counterparts). At the higher growthtemperatures,polycrystalline films are obtained (average grain size 0.7 ?m) with lower values of resistivity (1 ??cm), and optical transitions at 1.68, 1.90, and 2.55 eV (very close to the single?crystal values). A hopping conduction mechanism has been detected at the lower measuringtemperature (T150 K). Structural and compositional characteristics are used to explain the behavior observed in the electrical and optical properties.
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En línea:
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https://eprints.ucm.es/id/eprint/27150/1/Martil%2C122libre.pdf
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