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By means of a contactless microwave phase shift technique, the minority carrier lifetime and surface recombination velocity were measured in multicrystalline silicon wafers containing iron and chromium. The bulk lifetime can be deduced, leading [...]texto impreso
Rezgui, B. Drid ; Gourbilleau, F. ; Maestre Varea, David ; Palais, O. ; Sibai, A. ; Lemiti, M. ; Bremond, G. | American Institute of Physics | 2012-07-15Experimental investigation of photoconductivity in Si-rich silicon oxide (SRSO)/SiO_2 multilayer (ML) structures prepared by magnetron reactive sputtering is reported. Photocurrent (PC) measurements show that the PC threshold increases with decr[...]texto impreso
Rezgui, B. ; Sibai, A. ; Nychyporuk, T. ; Lemiti, M. ; Bremond, G. ; Maestre Varea, David ; Palais, O. | Amer Inst Physics | 2010-05-03The size of silicon quantum dots (Si QDs) embedded in silicon nitride (SiN(x)) has been controlled by varying the total pressure in the plasma-enhanced chemical vapor deposition (PECVD) reactor. This is evidenced by transmission electron microsc[...]texto impreso
FeB and CrB pair reassociation kinetics in imperfect Si controlled by contactless lifetime scan maps
The kinetics of "metal-acceptor" pairing in boron-doped multicrystalline samples are investigated by means of contactless lifetime measurement. The case of FeB and CrB pairs is discussed and the influence of extended defect is evidenced for FeB.[...]texto impreso
This paper describes the "pairing - dissociation" behaviour of metal-acceptor pairs and proposes a method to measure metal concentrations in p-type boron doped silicon based on a contactless measurement technique. The first part of this paper su[...]texto impreso
Gourbilleau, F. ; Ternon, C. ; Maestre Varea, David ; Palais, O. ; Dufour, C. | American Institute of Physics | 2009-07-01Si-rich-SiO_2(SRSO)/SiO_2 multilayers (MLs) have been grown by reactive magnetron sputtering. The presence of silicon nanoclusters (Si-ncls) within the SRSO sublayer and annealing temperature influence optical absorption as well as photoluminesc[...]texto impreso
Maestre Varea, David ; Palais, O. ; Barakel, D. ; Pasquinelli, M. ; Alfonso, B. ; Gourbilleau, F. ; De Laurentis, M. ; Irace, A. | American Institute of Physics | 2010-03-15SiO_2 multilayers with embedded Si nanocrystals (Si-ncs) were investigated as an approach for developing highly efficient all Si tandem solar cells. The nanostructured samples, fabricated by means of a reactive magnetron sputtering, were structu[...]
