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Título:
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Growth and interface engineering of highly strained low bandgap group IV semiconductors
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Autores:
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Wirths, S. ;
Pampillón Arce, María Ángela ;
San Andres Serrano, Enrique ;
Starge, D. ;
Tiedemann, A.T. ;
Mussler, G. ;
Fox, A. ;
Breuer, U. ;
Hartmann, J-M. ;
Mantl, S. ;
Buca, D.
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Tipo de documento:
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texto impreso
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Editorial:
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IEEE, 2014
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Dimensiones:
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application/pdf
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Nota general:
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info:eu-repo/semantics/openAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Electricidad
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Materia = Ciencias: Física: Electrónica
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Tipo = Artículo
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Resumen:
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Highly tensile strained Ge(Sn) layers epitaxially grown on GeSn strain relaxed buffer layer have been presented. Electrical characterization exhibits good interfacial quality of the high-k gate stacks employing HfO2 on Ge and strained Ge. These results mark a first step towards electronic device integration of low bandgap highly tensely strained group IV semiconductors.
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En línea:
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https://eprints.ucm.es/33320/1/SanAndr%C3%A9s%2002%20postprint.pdf
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