|
Título:
|
Observation of a Mott insulating ground state for Sn/Ge(111) at low temperature
|
|
Autores:
|
Cortés, R ;
Tejeda, A. ;
Lobo, J. ;
Didiot, C. ;
Kierren, B. ;
Malterre, D. ;
Michel, E.G. ;
Mascaraque Susunaga, Arantzazu
|
|
Tipo de documento:
|
texto impreso
|
|
Editorial:
|
American Physical Society, 2006-03-31
|
|
Dimensiones:
|
application/pdf
|
|
Nota general:
|
info:eu-repo/semantics/openAccess
|
|
Idiomas:
|
|
|
Palabras clave:
|
Estado = Publicado
,
Materia = Ciencias: Física: Física de materiales
,
Tipo = Artículo
|
|
Resumen:
|
We report an investigation on the properties of 0.33 ML of Sn on Ge(111) at temperatures down to 5 K. Low-energy electron diffraction and scanning tunneling microscopy show that the (3 x 3) phase formed at similar to 200 K, reverts to a new (root 3 x root 3)R30 degrees phase below 30 K. The vertical distortion characteristic of the (3 x 3) phase is lost across the phase transition, which is fully reversible. Angle-resolved photoemission experiments show that, concomitantly with the structural phase transition, a metal-insulator phase transition takes place. The (root 3 x root 3)R30 degrees ground state is interpreted as the formation of a Mott insulator for a narrow half-filled band in a two-dimensional triangular lattice.
|
|
En línea:
|
https://eprints.ucm.es/id/eprint/28336/1/Mascaraque%2CA%2027libre.pdf
|
