|
Título:
|
Structural and optoelectronical characterization of Si-SiO_2/SiO_2 multilayers with applications in all Si tandem solar cells
|
|
Autores:
|
Maestre Varea, David ;
Palais, O. ;
Barakel, D. ;
Pasquinelli, M. ;
Alfonso, B. ;
Gourbilleau, F. ;
De Laurentis, M. ;
Irace, A.
|
|
Tipo de documento:
|
texto impreso
|
|
Editorial:
|
American Institute of Physics, 2010-03-15
|
|
Dimensiones:
|
application/pdf
|
|
Nota general:
|
info:eu-repo/semantics/openAccess
|
|
Idiomas:
|
|
|
Palabras clave:
|
Estado = Publicado
,
Materia = Ciencias: Física: Física de materiales
,
Materia = Ciencias: Física: Física del estado sólido
,
Tipo = Artículo
|
|
Resumen:
|
SiO_2 multilayers with embedded Si nanocrystals (Si-ncs) were investigated as an approach for developing highly efficient all Si tandem solar cells. The nanostructured samples, fabricated by means of a reactive magnetron sputtering, were structurally and optoelectronically characterized using different techniques. High resolution transmission electron microscopy (TEM) and energy filtered images in TEM show a high density of Si-nc with uniform sizes below 4 nm, while electrical characterization indicates high resistance values (10^2 k?) of these samples. In order to develop a better understanding of the optoelectronical behavior, photocurrent I-V curves were measured, obtaining variations under "dark" or "illumination" conditions. Recombination lifetimes in the order of tenths of nanoseconds were estimated by applying the transverse pump/probe technique.
|
|
En línea:
|
https://eprints.ucm.es/44894/1/MaestreD%2004%20LIBRE.pdf
|
