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Miranda Pantoja, José Miguel ; Sebastián Franco, José Luis | IEEE-Inst Electrical Electronics Engineers Inc | 1995-08This paper presents a detailed analysis of the accuracy of nonoscillating one-port device noise measurements. A new expression is given for the calculation of the noise temperature from parameters that can be measured directly by using either a [...]texto impreso
Franco Peláez, Francisco Javier ; Palomar Trives, Carlos ; Liu, Shih Fu ; López Calle, Isabel ; Maestro de la Cuerda, Juan Antonio ; Agapito Serrano, Juan Andrés | IEEE-Inst Electrical Electronics Engineers Inc | 2011-09-19Unlike for memory elements inside integrated circuits, scarce life tests have been performed to study single event transients in discrete analog devices. The reason is that life tests require a large amount of samples to be stored for having eno[...]texto impreso
Franco Peláez, Francisco Javier ; Lozano Rogado, Jesús ; Santos Blanco, José Pedro ; Agapito Serrano, Juan Andrés | IEEE-Inst Electrical Electronics Engineers Inc | 2003-12Tests on instrumentation amplifiers exposed to neutron radiation have been done. The tested devices were commercial instrumentation amplifiers or designed with rad-tol commercial operational amplifiers. The results show changes in frequency beha[...]texto impreso
Franco Peláez, Francisco Javier ; Zong, Yi ; Agapito Serrano, Juan Andrés | IEEE-Inst Electrical Electronics Engineers Inc | 2007-08-20Power operational amplifiers were irradiated in a mixed neutron and gamma radiation environment. These experiments showed that the degradation of the power operational amplifiers shares a great deal of characteristics with that of the low signal[...]texto impreso
Rezaei, Mohammadreza ; Martín Holgado, Pedro ; Morilla, Yolanda ; Franco Peláez, Francisco Javier ; Fabero Jiménez, Juan Carlos ; Mecha López, Hortensia ; Puchner, Helmut ; Hubert, Guillaume ; Clemente Barreira, Juan Antonio | IEEE-Inst Electrical Electronics Engineers Inc | 2020-10This article presents an experimental study on the sensitivity of a commercial-off-the-shelf (COTS) bulk 65-nm static random access memory (SRAM) under 15.6 MeV proton irradiation when powered up at ultralow bias voltage. Tests were run on stand[...]texto impreso
Velazco, Raoul ; Clemente Barreira, Juan Antonio ; Hubert, Guillaume ; Mansour, Wassim ; Palomar Trives, Carlos ; Franco Peláez, Francisco Javier ; Baylac, Maud ; Rey, Solenne ; Rosetto, Olivier ; Villa, Francesca | IEEE-Inst Electrical Electronics Engineers Inc | 2014-12Radiation tests with 15-MeV neutrons were performed in a COTS SRAM including a new memory cell design combining SRAM cells and DRAM capacitors to determine if, as claimed, it is soft-error free and to estimate upper bounds for the cross-section.[...]texto impreso
Franco Peláez, Francisco Javier ; Zong, Yi ; Agapito Serrano, Juan Andrés ; Casas-Cubillos, Juan ; Rodríguez-Ruiz, Miguel Ángel | IEEE-Inst Electrical Electronics Engineers Inc | 2004-07-22Radiation tests on CMOS analog switches were carried out in order to select the most tolerant device for future use in the cryogenic system of the CERN large hadron collider. After irradiation, the devices showed some interesting changes related[...]texto impreso
Besada Portas, Eva ; Torre Cubillo, Luis de la ; Cruz García, Jesús Manuel de la ; Andrés Toro, Bonifacio de | IEEE-Inst Electrical Electronics Engineers Inc | 2010-08This paper presents a path planner for multiple unmanned aerial vehicles (UAVs) based on evolutionary algorithms (EAs) for realistic scenarios. The paths returned by the algorithm fulfill and optimize multiple criteria that 1) are calculated bas[...]texto impreso
Cruz García, Jesús Manuel de la ; Aranda, Joaquín ; Girón Sierra, José María ; Velasco, Francisco | IEEE-Inst Electrical Electronics Engineers Inc | 2004-04The research comprises two main steps: to develop a tool for control design in the form of a computer-based simulation and to use this tool to develop satisfactory controllerstexto impreso
Franco Peláez, Francisco Javier ; Zong, Yi ; Agapito Serrano, Juan Andrés | IEEE-Inst Electrical Electronics Engineers Inc | 2006-08-28Radiation tests have shown the existence of inactivity windows in analog switches. It means that the devices lose their ability to switch between ON and OFF states if the total radiation dose is placed between two characteristic values. Once the[...]texto impreso
Miranda Pantoja, José Miguel ; Muñoz San Martín, Sagrario ; Sebastián Franco, José Luis | IEEE-Inst Electrical Electronics Engineers Inc | 2002-08In this paper, we investigate how critical the calibration kit is on an accurate estimation of microwave device parasitic elements. The semiempirical cold FET method has been applied to the extraction of the small signal equivalent circuit of se[...]texto impreso
Franco Peláez, Francisco Javier ; Clemente Barreira, Juan Antonio ; Korkian, Golnaz ; Fabero Jiménez, Juan Carlos ; Mecha López, Hortensia ; Velazco, Raoul | IEEE-Inst Electrical Electronics Engineers Inc | 2020In radiation tests on SRAMs or FPGAs, two or more independent bitflips can be misled with a multiple event if they accidentally occur in neighbor cells. In the past, different tests such as the ``birthday statistics'' have been proposed to estim[...]texto impreso
Jules Horowitz reactor project. Exploration tests concerning WIFI modules behaviour under gamma flux
Gaillot, Stephan ; Pouchin, Bernard ; Marques, José ; López Calle, Isabel ; Franco Peláez, Francisco Javier ; Agapito Serrano, Juan Andrés | IEEE-Inst Electrical Electronics Engineers Inc | 2011-09-19Within the framework of experimental field on technologies developments for research reactors applications, an experimental program dedicated to electronics behaviour under flux has been performed on wireless (WIFI) modules. The interest of usin[...]texto impreso
Palomar Trives, Carlos ; López Calle, Isabel ; Franco Peláez, Francisco Javier ; Agapito Serrano, Juan Andrés ; González Izquierdo, Jesús | IEEE-Inst Electrical Electronics Engineers Inc | 2013-02This paper is aimed at emulating the errors in semiconductor memories by space radiation with a pulsed laser that acts as an ion. A sensitivity map of the memory is performed identifying potential error areas and how many errors simultaneously occur.texto impreso
López Calle, Isabel ; Franco Peláez, Francisco Javier ; Agapito Serrano, Juan Andrés ; González Izquierdo, Jesús | IEEE-Inst Electrical Electronics Engineers Inc | 2011-02-08One of the main phenomena that commit the reliability of analog electronic systems working in the outer space is the presence of energetic ions that produce spurious transients after crossing the device. These pulses are transmitted to the netwo[...]
