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Título:
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Scanning tunneling spectroscopy of transition-metal-doped GaSb
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Autores:
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Hidalgo Alcalde, Pedro ;
Méndez Martín, Bianchi ;
Piqueras de Noriega, Javier ;
Dutta, P: S. ;
Dieguez, E.
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Tipo de documento:
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texto impreso
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Editorial:
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American Physical Society, 1999-10-15
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Dimensiones:
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application/pdf
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Nota general:
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info:eu-repo/semantics/openAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Física de materiales
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Tipo = Artículo
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Resumen:
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V- and Ru-doped GaSb crystals have been investigated by scanning tunneling spectroscopy in a combined scanning electron microscope-scanning tunneling microscope system. Local variations of surface band gap have been measured with high spatial resolution. Precipitates in both kinds of doped samples show a nearly metallic behavior. The surface band gaps in the GaSb matrix have been found to depend on the dopant. [S0163-1829(99)06439-5].
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En línea:
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https://eprints.ucm.es/id/eprint/24654/1/MendezBianchi46libre.pdf
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