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González Díaz, Germán ; Artús, L. ; Blanco, N. ; Cuscó, R. ; Ibañez, J. ; Long, A.R. ; Rahman, M. | American Institute of Physics | 2000-12-01We have verified the accuracy of free-charge determinations from Raman scattering in doped semiconductors by comparing the results obtained from phonon-plasmon coupled-mode line-shape fits with the charge-density values extracted from the analys[...]texto impreso
Corrochano, J. ; Hidalgo Alcalde, Pedro ; Lieblich, M. ; Ibañez, J. | Elsevier Science INC | 2010-11The mechanical properties of particle-reinforced aluminum matrix composites (AMCs) are largely dependent on the microstructure of the materials, which in turn is largely dependent on the processing history [1]. Powder metallurgy (PM) is a common[...]texto impreso
Hobig, N. ; Mediavilla, R. ; Gibert, L. ; Santisteban Navarro, Juan Ignacio ; Cendon, D.I. ; Ibañez, J. ; Reicherter, K. | Elsevier | 2016-07Here, we present a terrestrial multi-proxy record of Late Quaternary environmental changes in the southern Iberian Peninsula covering approximately 30 ka. This sedimentary record originates from a saline playa lake (Laguna de Fuente de Piedra) h[...]texto impreso
González Díaz, Germán ; Blanco, N. ; Artús, L. ; Cuscó, R. ; Ibañez, J. | American Physical Society | 1999-08-15We have studied LO phonon-plasmon coupled modes by means of Raman scattering in n-InP for carrier densities between 6x10(16) and 1x10(19) cm(-3). A line-shape theory based on the Lindhard-Mermin dielectric function that takes into account the no[...]texto impreso
González Díaz, Germán ; Martín, J.M. ; Artús, L. ; Cuscó, R. ; Ibañez, J. | American Institute of Physics | 1997-10-15We have studied the lattice recovery by rapid thermal annealing of Si+-implanted InP using Raman spectroscopy. The crystallinity recovery for different annealing temperatures of samples totally amorphized by the implantation can be monitored by [...]
