Título:
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Titanium doped silicon layers with very high concentration
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Autores:
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Mártil de la Plaza, Ignacio ;
González Díaz, Germán ;
Olea Ariza, Javier
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Tipo de documento:
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texto impreso
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Editorial:
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American Institute of Physics, 2008-07-01
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Dimensiones:
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application/pdf
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Nota general:
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info:eu-repo/semantics/openAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Electricidad
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Materia = Ciencias: Física: Electrónica
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Tipo = Artículo
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Resumen:
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Ion implantation of Ti into Si at high doses has been performed. After laser annealing the maximum average of substitutional Ti atoms is about 10(18) cm(-3). Hall effect measurements show n-type samples with mobility values of about 400 cm(2)/V s at room temperature. These results clearly indicate that Ti solid solubility limit in Si has been exceeded by far without the formation of a titanium silicide layer. This is a promising result toward obtaining of an intermediate band into Si that allows the design of a new generation of high efficiency solar cell using Ti implanted Si wafers.
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En línea:
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https://eprints.ucm.es/id/eprint/25960/1/Martil%2C28libre.pdf
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