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Título:
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Study of growth hillocks in GaN : Si films by electron beam induced current imaging
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Autores:
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Zaldivar, M.H. ;
Fernández Sánchez, Paloma ;
Piqueras de Noriega, Javier
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Tipo de documento:
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texto impreso
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Editorial:
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American Institute of Physics, 2001-07-15
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Dimensiones:
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application/pdf
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Nota general:
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info:eu-repo/semantics/openAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Física de materiales
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Tipo = Artículo
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Resumen:
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Remote electron beam induced current (REBIC) measurements have been carried out to investigate electrically active regions in Si doped GaN films. REBIC bright-dark contrast has been observed in the border of growth, round or pyramidal, hillocks, while pyramidal hillocks also show bright contrast at the center. The results are explained by the inhomogeneous distribution of charged point defects and impurities at the hillocks.
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En línea:
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https://eprints.ucm.es/id/eprint/26298/1/PiquerasJ152libre.pdf
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