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Domínguez-Adame Acosta, Francisco ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; De Diego, N. ; LLopis, J. ; Moser, P. | Editions Physique | 1989-06Positron annihilation (PA) is a sensitive technique for detection of vacancy-type defects in crystals, that has been widely used in recent years to study defects in semiconductors (1). On the other side, CL and other luminescence techniques have[...]texto impreso
Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Domínguez-Adame Acosta, Francisco ; De Diego, N. | Amer Inst Physics | 1988-11-01Cathodoluminiscence (CL) scanning electron microscopy and positron annihilation techniques have been used to investigate the distribution of defects in GaAs: Te wafers. Dislocation density and near-band-edge CL profiles along the wafer have di[...]texto impreso
Domínguez-Adame Acosta, Francisco ; Piqueras de Noriega, Javier ; De Diego, N. ; LLopis, J. | American Institute of Physics | 1988-04-15Cathodoluminescencescanning electron microscopy and positron annihilation techniques have been used to investigate the distribution of defects in GaP wafers. The results show the existence of a gradient of the concentration of vacancy?type defec[...]
