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González Díaz, Germán ; Artús, L. ; Blanco, N. ; Cuscó, R. ; Ibañez, J. ; Long, A.R. ; Rahman, M. | American Institute of Physics | 2000-12-01We have verified the accuracy of free-charge determinations from Raman scattering in doped semiconductors by comparing the results obtained from phonon-plasmon coupled-mode line-shape fits with the charge-density values extracted from the analys[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Redondo, E. ; Blanco, N. | Amer Inst Physics | 1999-02-15A minimum interface trap density of 10(12) eV(-1) cm(-2) was obtained on SiNx:H/InP metalinsulator-semiconductor structures without InP surface passivation. The SiNx:H gate insulator was obtained by the electron cyclotron resonance plasma method[...]texto impreso
González Díaz, Germán ; Blanco, N. ; Artús, L. ; Cuscó, R. ; Ibañez, J. | American Physical Society | 1999-08-15We have studied LO phonon-plasmon coupled modes by means of Raman scattering in n-InP for carrier densities between 6x10(16) and 1x10(19) cm(-3). A line-shape theory based on the Lindhard-Mermin dielectric function that takes into account the no[...]
