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Pampillón Arce, María Ángela | 2010texto impreso
Wirths, S. ; Pampillón Arce, María Ángela ; San Andres Serrano, Enrique ; Starge, D. ; Tiedemann, A.T. ; Mussler, G. ; Fox, A. ; Breuer, U. ; Hartmann, J-M. ; Mantl, S. ; Buca, D. | IEEE | 2014Highly tensile strained Ge(Sn) layers epitaxially grown on GeSn strain relaxed buffer layer have been presented. Electrical characterization exhibits good interfacial quality of the high-k gate stacks employing HfO2 on Ge and strained Ge. These [...]texto impreso
The integrated circuit based on complementary metal-oxide-semiconductor (CMOS) devices is currently the dominant technology in the microelectronic industry. Their success is based on their low static power consumption and their high integration [...]texto impreso
Feijoo, P.C. ; Pampillón Arce, María Ángela ; San Andres Serrano, Enrique ; Fierro, J.L.G. | Elsevier Science SA | 2015-10-30In this work we use the high pressure sputtering technique to deposit the high permittivity dielectric gadolinium scandate on silicon substrates. This nonconventional deposition technique prevents substrate damage and allows for growth of ternar[...]texto impreso
Lucía Mulas, María Luisa ; Pampillón Arce, María Ángela ; San Andres Serrano, Enrique ; Feijoo Guerrero, Pedro Carlos | AVS Amer Inst. Physics | 2013-01Gadolinium oxide thin films were deposited on silicon by a two-step process: high pressure sputtering from a metallic gadolinium target followed by an in situ plasma oxidation. Several plasma conditions for metal deposition and oxidation were st[...]texto impreso
Gao, Z. ; Romero, M.F. ; Pampillón Arce, María Ángela ; San Andres Serrano, Enrique ; Calle, F. | IEEE | 2015Thermal stability of AlGaN/GaN MOS-HEMTs and -diodes using Gd_(2)O_(3) are investigated by means of different thermal cycles and storage tests up to 500ºC for one week. IV DC and pulsed characteristics of the devices before and after the process[...]
