|
Título:
|
Raman-scattering criteria for characterization of anneal-restored zinc blende single crystals: Application to Si+-implanted InP
|
|
Autores:
|
González Díaz, Germán ;
Martín, J.M. ;
Artús, L. ;
Cuscó, R. ;
Ibañez, J.
|
|
Tipo de documento:
|
texto impreso
|
|
Editorial:
|
American Institute of Physics, 1997-10-15
|
|
Dimensiones:
|
application/pdf
|
|
Nota general:
|
info:eu-repo/semantics/openAccess
|
|
Idiomas:
|
|
|
Palabras clave:
|
Estado = Publicado
,
Materia = Ciencias: Física: Electricidad
,
Materia = Ciencias: Física: Electrónica
,
Tipo = Artículo
|
|
Resumen:
|
We have studied the lattice recovery by rapid thermal annealing of Si+-implanted InP using Raman spectroscopy. The crystallinity recovery for different annealing temperatures of samples totally amorphized by the implantation can be monitored by means of their Raman spectra. However, free-charge coupling with the LO mode and possible misorientation of the recrystallized material may alter substantially the first-order Raman spectrum, making it unreliable for a good characterization of the lattice recovery. The study of second-order Raman spectrum overcomes the problems present in the analysis of first-order Raman spectrum and provides suitable criteria to assess the recrystallization of the implanted and annealed samples. After rapid thermal annealing at 875 degrees C for 10 s, the intensity of the second-order peaks approaches 70% of its value in virgin InP, and third-order Raman peaks are also clearly detected, evidencing the good lattice recovery achieved.
|
|
En línea:
|
https://eprints.ucm.es/id/eprint/27482/1/Gonzalez-Diaz%2CG%20115libre.pdf
|
