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Autor Albrecht, M. |
Documentos disponibles escritos por este autor (5)
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Albrecht, M. ; Cremades Rodríguez, Ana Isabel ; Krinke, J. ; Christiansen, S. ; Ambacher, O. ; Piqueras de Noriega, Javier ; Strunk, H. P. ; Stutzmann, M. | Wiley-V C H Verlag Gmbh | 1999-11We analyse the recombination and scattering at dislocations in Si doped AlGaN layers by transmission electron microscopy (TEM), electron beam induced current (EBIC) and cathodoluminescence. We show that c-type screw dislocations are nonradiative[...]texto impreso
Cremades Rodríguez, Ana Isabel ; Albrecht, M. ; Krinke, J. ; Dimitrov, R. ; Stutzmann, M. ; Strunk, H. P. | American Institute of Physics | 2000-03-01Combined electron beam induced current and transmission electron microscopy (TEM) measurements have been performed on both undoped and Si-doped AlGaN epitaxial films with aluminum contents x ranging from x = 0 to x = 0.79, in order to correlate [...]texto impreso
Cremades Rodríguez, Ana Isabel ; Albrecht, M. ; Voigt, A. ; Krinke, J. ; Dimitrov, R. ; Ambacher, O. ; Stutzmann, M. | Trans Tech-Scitec Publications LDT | 1998Combined electron beam induced current and transmission electron microscopy measurements have been performed on both undoped and Si-doped AlGaN epitaxial films with aluminium contents x ranging from x=0 to x=0.79. TEM analysis shows the distribu[...]texto impreso
Cremades Rodríguez, Ana Isabel ; Albrecht, M. ; Ulloa, J.M. ; Piqueras de Noriega, Javier ; Strunk, H.P. ; Hanser, D. ; Davis, R. F. | Materials Research Society | 2000A series of 100 nm thick InGaN films with In content up to 14% has been grown by MOVPE on SiC substrates. Optical characterization was carried out by means of reflectance spectrometry, photoluminescence and cathodoluminescence. Optical propertie[...]texto impreso
Cremades Rodríguez, Ana Isabel ; Piqueras de Noriega, Javier ; Albrecht, M. ; Stutzmann, M. ; Strunk, H.P. | Elsevier Science SA | 2002-03-22InGaN quantum well (QW) structures with different thicknesses have been characterised by means of cathodoluminescence (CL) in the scanning electron microscope and transmission electron microscopy (TEM), in order to study the structural defects t[...]