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Título:
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Silicon-rich SiO_2/SiO_2 multilayers: A promising material for the third generation of solar cell
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Autores:
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Gourbilleau, F. ;
Ternon, C. ;
Maestre Varea, David ;
Palais, O. ;
Dufour, C.
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Tipo de documento:
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texto impreso
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Editorial:
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American Institute of Physics, 2009-07-01
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Dimensiones:
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application/pdf
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Nota general:
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info:eu-repo/semantics/openAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Física de materiales
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Materia = Ciencias: Física: Física del estado sólido
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Tipo = Artículo
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Resumen:
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Si-rich-SiO_2(SRSO)/SiO_2 multilayers (MLs) have been grown by reactive magnetron sputtering. The presence of silicon nanoclusters (Si-ncls) within the SRSO sublayer and annealing temperature influence optical absorption as well as photoluminescence. The optimized annealing temperature has been found to be 1100°C, which allows the recovery of defects and thus enhances photoluminescence. Four MLs with Si-ncl size ranging from 1.5 to 8 nm have been annealed using the optimized conditions and then studied by transmission measurements. Optical absorption has been modeled so that a size effect in the linear absorption coefficient ? (in cm^(-1)) has been evidenced and correlated with TEM observations. It is demonstrated that amorphous Si-ncl absorption is fourfold higher than that of crystalline Si ncls.
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En línea:
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https://eprints.ucm.es/44895/1/MaestreD%2005%20LIBRE.pdf
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