|
Título:
|
?-Ga?O? nanowires for an ultraviolet light selective frequency photodetector
|
|
Autores:
|
López, I. ;
Castaldini, A. ;
Cavallini, A. ;
Nogales Díaz, Emilio ;
Méndez Martín, Bianchi ;
Piqueras de Noriega, Javier
|
|
Tipo de documento:
|
texto impreso
|
|
Editorial:
|
IOP publishing ltd, 2014-10-15
|
|
Dimensiones:
|
application/pdf
|
|
Nota general:
|
info:eu-repo/semantics/openAccess
|
|
Idiomas:
|
|
|
Palabras clave:
|
Estado = Publicado
,
Materia = Ciencias: Física: Física de materiales
,
Materia = Ciencias: Física: Física del estado sólido
,
Tipo = Artículo
|
|
Resumen:
|
The behaviour of ß-Ga?O? nanowires as photoconductive material in deep ultraviolet photodetectors to operate in the energy range 3.0-6.2 eV has been investigated. The nanowires were grown by a catalyst-free thermal evaporation method on gallium oxide substrates. Photocurrent measurements have been carried out on both undoped and Sn-doped Ga?O? nanowires to evidence the influence of the dopant on the photodetector performances. The responsivity spectrum of single nanowires show maxima in the energy range 4.8-5.4 eV and a strong dependence on the pulse frequency of the excitation light has been observed for undoped nanowires. Our results show that the responsivity of beta- Ga?O? nanowires can be controlled by tuning the chopper frequency of the excitation light and/ or by doping of the nanowires. Non-linear behavior in characteristic current-voltage curves has been observed for Ga?O? : Sn nanowires. The mechanism leading to this behaviour has been discussed and related to space-charged-limited current effects. In addition, the responsivity achieved by doped nanowires at lower bias is higher than for undoped ones.
|
|
En línea:
|
https://eprints.ucm.es/45379/1/NogalesD%C3%ADazE%2010%20PREPRINT%20%2B%20EMBARGO%2015_10_2015.pdf
|
