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Título:
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Electrical characterization of amorphous silicon MIS-based structures for HIT solar cell applications
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Autores:
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Garcia, Hector ;
Castán, Helena ;
Dueñas, Salvador ;
Bailón, Luis ;
García Hernansanz, Rodrigo ;
Olea Ariza, Javier ;
Prado Millán, Álvaro del ;
Mártil de la Plaza, Ignacio
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Tipo de documento:
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texto impreso
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Editorial:
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Springer, 2016-07-16
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Dimensiones:
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application/pdf
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Nota general:
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cc_by
info:eu-repo/semantics/openAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Electricidad
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Materia = Ciencias: Física: Electrónica
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Tipo = Artículo
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Resumen:
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A complete electrical characterization of hydrogenated amorphous silicon layers (a-Si:H) deposited on crystalline silicon (c-Si) substrates by electron cyclotron resonance chemical vapor deposition (ECR-CVD) was carried out. These structures are of interest for photovoltaic applications. Different growth temperatures between 30 and 200 °C were used. A rapid thermal annealing in forming gas atmosphere at 200 °C during 10 min was applied after the metallization process. The evolution of interfacial state density with the deposition temperature indicates a better interface passivation at higher growth temperatures. However, in these cases, an important contribution of slow states is detected as well. Thus, using intermediate growth temperatures (100–150 °C) might be the best choice.
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En línea:
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https://eprints.ucm.es/39027/1/martil_01LIBRE%2BCC.pdf
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