Título:
|
Microwave noise measurements on Al0.3Ga0.7As/GaAs channels grown by molecular beam epitaxy using As-2 and As-4
|
Autores:
|
Miranda Pantoja, José Miguel ;
Sebastián Franco, José Luis
|
Tipo de documento:
|
texto impreso
|
Editorial:
|
IOP publishing ltd, 1998-07
|
Dimensiones:
|
application/pdf
|
Nota general:
|
info:eu-repo/semantics/restrictedAccess
|
Idiomas:
|
|
Palabras clave:
|
Estado = Publicado
,
Materia = Ciencias: Física: Electricidad
,
Materia = Ciencias: Física: Electrónica
,
Tipo = Artículo
|
Resumen:
|
We present microwave noise measurements performed on different high electron mobility transistor channels under both darkness and illumination. Two structures of Alo(0.3)Gao(0.7)As/GaAs layers have been grown with beams of Asp and As-4 using molecular beam epitaxy. The measured room temperature, Hall mobilities and sheet carrier densities have demonstrated in both cases a good de performance of the channels. However, the measurement of the noise temperature at 1.5 GHz has shown the sample grown with As-4 to be considerably noisier than the one grown with AS(4).
|
En línea:
|
https://eprints.ucm.es/id/eprint/24743/1/MirandaJM107.pdf
|