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Título:
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Structural characterisation of (11(2)over-bar0) 4H-SiC substrates by cathodoluminescence and X-ray topography
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Autores:
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Hidalgo Alcalde, Pedro ;
Ottaviani, L. ;
Idrissi, H. ;
Lancin, M. ;
Martinuzzi, S. ;
Pichaud, B.
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Tipo de documento:
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texto impreso
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Editorial:
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E D P Sciences, 2004-07
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Física de materiales
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Tipo = Artículo
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Resumen:
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Silicon Carbide (SiC) is a wide band gap semiconductor, having opto-electronic properties that are suitable for many applications. Some structural defects due to crystal growth and/or doping technologies are commonly present in the substrates of SiC. The (11 (2) over bar0)-oriented 4H-SiC bulk wafers are particularly investigated, due to some advantages with respect to the (0001)-Si face. One of these advantages is a better crystal reordering during post-implantation annealing. In this paper cathodoluminescence (CL) and X-Ray topography measurements have been carried out in order to investigate the optical and structural properties of commercial (11 (2) over bar0) 4H n(+)-type substrates.
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