Título:
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Characterization of defects at grain boundaries of GaP and InP by infrared cathodoluminescence
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Autores:
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Domínguez-Adame Acosta, Francisco ;
Piqueras de Noriega, Javier
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Tipo de documento:
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texto impreso
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Editorial:
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American Institute of Physics, 1991-01-01
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Dimensiones:
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application/pdf
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Nota general:
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info:eu-repo/semantics/openAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Física de materiales
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Tipo = Artículo
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Resumen:
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Grain boundaries in GaP and InP have been studied by infrared cathodoluminescence (CL). In GaP the results indicate that there exists a depletion region beside grain boundaries where the concentration of P(Ga) antisite defects is lower than in the bulk material. In InP the near-edge CL emission and a deep level luminescence at 1.07 eV have been found to cause similar grain boundary CL contrast.
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En línea:
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https://eprints.ucm.es/id/eprint/27038/1/PiquerasJ277libre.pdf
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