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Título:
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Deposition of SiNx : H thin films by the electron cyclotron resonance and its application to Al/SiNx : H/Si structures
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Autores:
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Mártil de la Plaza, Ignacio ;
González Díaz, Germán ;
García, S. ;
Castán, E. ;
Dueñas, S. ;
Fernández, M.
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Tipo de documento:
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texto impreso
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Editorial:
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American Institute of Physics, 1998-01-01
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Dimensiones:
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application/pdf
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Nota general:
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info:eu-repo/semantics/openAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Electricidad
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Materia = Ciencias: Física: Electrónica
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Tipo = Artículo
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Resumen:
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We have analyzed the electrical properties and bonding characteristics of SiNx:H thin films deposited at 200 degrees C by the electron cyclotron resonance plasma method. The films show the presence of hydrogen bonded to silicon (at the films with the ratio N/Si
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En línea:
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https://eprints.ucm.es/id/eprint/27065/1/Martil%2C98libre.pdf
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