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Título:
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Effect of erbium doping on the defect structure of GaSb crystals
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Autores:
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Hidalgo Alcalde, Pedro ;
Méndez Martín, Bianchi ;
Piqueras de Noriega, Javier ;
Plaza, J. ;
Dieguez, E.
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Tipo de documento:
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texto impreso
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Editorial:
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IOP publishing ltd, 1998-12
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Dimensiones:
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application/pdf
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Nota general:
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info:eu-repo/semantics/openAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Física de materiales
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Tipo = Artículo
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Resumen:
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GaSb single crystals with different Er concentrations have been studied by cathodoluminescence in the scanning electron microscope. Low Er doping has been found to reduce the concentration of native accepters. In crystals with higher Er concentrations, Er-Sb precipitates form and doping becomes less efficient in suppressing the accepters. In these samples intraionic Er luminescence is observed.
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En línea:
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https://eprints.ucm.es/id/eprint/24713/1/MendezBianchi52.pdf
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