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Lorenz, K. ; Nogales Díaz, Emilio ; Nédélec, R. ; Penner, J. ; Vianden, R. ; Alves, E. ; Martin, R.W. ; O`Donnell, K.P. | Materials Research Soc | 2006GaN films were implanted with Er and Eu ions and rapid thermal annealing was performed at 1000, 1100 and 1200 ?C in vacuum, in flowing nitrogen gas or a mixture of NH? and N?. Rutherford backscattering spectrometry in the channeling mode was use[...]texto impreso
O'Donnell, KP ; Katchkanova, V. ; Wang, K. ; Martin, R.W. ; Edwards, P.R. ; Hourahine, B. ; Nogales Díaz, Emilio ; Mosselmans, J.F.W. ; De Vries, B. | Materials Research Society | 2005This presentation reviews recent lattice location studies of rare earth (RE) ions in GaN by electron emission channelling (EC) and X-ray absorption fine structure (XAFS) techniques. These studies agree that RE ions at low concentrations (whether[...]
