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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | Elsevier Science SA | 2004-07-01The bonding structure and hydrogen content of amorphous hydrogenated silicon nitride (a-SiNx:H) thin films have been investigated by infrared spectroscopy and ion beam techniques. Electron cyclotron resonance plasma enhanced chemical vapor depos[...]texto impreso
Urbieta Quiroga, Ana Irene ; Fernández Sánchez, Paloma ; Hardalo, C. ; Piqueras de Noriega, Javier ; Sekiguchi, T. | Elsevier Science SA | 2002-04-30Bulk ZnO single crystals grown by the hydrothermal (HTT) and alkali flux methods have been investigated by means of scanning tunnelling spectroscopy (STS) and time resolved cathodoluminescence (CL). Measurements were performed in the different c[...]texto impreso
Urchulutegui, M. ; Gómez, P. ; Piqueras de Noriega, Javier ; Dworschak, F. | Elsevier Science SA | 1994-05The effect of irradiation with 2.5 MeV electrons on InP single crystals is investigated by cathodoluminescence (CL) in the scanning electron microscope. Irradiation causes changes in the CL spectra but no luminescence band can be associated with[...]texto impreso
Cathodoluminescence of porous silicon after mechanical damage with a tip has been studied in the scanning electron microscope. Mechanical damage results in the exposure of new surfaces related to fracture and to small particles appearing over th[...]texto impreso
Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Dutta, P. S. ; Dieguez, E. | Elsevier Science SA | 1996-12-15We present the homogeneity and luminescence properties of bulk GaSb obtained by the cathodoluminescence (CL) technique in the scanning electron microscope. The samples used in this study are as-grown undoped and impurity diffused (tellurium) and[...]texto impreso
Piqueras de Noriega, Javier ; Sotillo Buzarra, Belén ; Fernández Sánchez, Paloma | Elsevier Science SA | 2013-06-25Vapor–solid (VS) growth method at temperatures in the range from 1000 °C to 1200 °C has been used to obtain In doped ZnS micro- and nanostructures. The morphologies of the synthesized structures depend strongly on the deposition temperature, con[...]texto impreso
Panin, G. ; Piqueras de Noriega, Javier ; Sochinskii, N. V. ; Dieguez, E. | Elsevier Science SA | 1996-12-15The origin and spatial distribution of radiative defects in undoped and Ge-doped CdTe wafers have been studied by CL spectroscopy and imaging techniques in the scanning electron microscope (SEM) before and after the wafer annealing in HgI2 vapor[...]texto impreso
Hidalgo Alcalde, Pedro ; Méndez Martín, Bianchi ; Ruiz, C. ; Bermudez, V. ; Piqueras de Noriega, Javier ; Dieguez, E. | Elsevier Science SA | 2005-07-25b-doped GaSb ingots have been grown by the Bridgman method. The defect structure and compositional homogeneity of the crystals have been investigated by cathodoluminescence and X-ray microanalysis in the scanning electron microscope. The nature [...]texto impreso
Pereira, L.. ; Pereira, E. ; Cremades Rodríguez, Ana Isabel ; Piqueras de Noriega, Javier ; Jiménez, J. ; Bielza, J.M. | Elsevier Science SA | 1999-07Diamond and diamond-like films grown by the torch flame method have been analysed by different techniques, namely scanning electron microscopy, Raman spectroscopy, electron paramagnetic resonance and catholuminescence microscopy, in order to inv[...]texto impreso
Castaldini, A. ; Cavallini, A. ; Polenta, L. ; Díaz-Guerra Viejo, Carlos ; Piqueras de Noriega, Javier | Elsevier Science SA | 2002-04-30Technological improvement of GaN-based devices for electronic and optoelectronic applications makes essential both monitoring and controlling point and extended defects, which can have detrimental effects in device performance. For gallium nitri[...]texto impreso
This is a critical review of MAX-phase carbides and nitrides from an electronic-structure and chemical bonding perspective. This large group of nanolaminated materials is of great scientific and technological interest and exhibit a combination o[...]texto impreso
Castaldini, A. ; Cavallini, A: ; Fraboni, B. ; Polenta, L. ; Fernández Sánchez, Paloma ; Piqueras de Noriega, Javier | Elsevier Science SA | 1996-12-15We have investigated deep levels in semiconducting and semi-insulating II-VI compounds, namely undoped CdTe, CdTe:Cl and CdZnTe, in order to understand their role in the compensation mechanisms. To this aim Lye have utilized both junction spectr[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; San Andres Serrano, Enrique | Elsevier Science SA | 2006-10-25The composition of polycrystalline hafnium oxide thin films has been measured by heavy-ion elastic recoil detection analysis (HI-ERDA). The films were deposited by high-pressure reactive sputtering (HPRS) on silicon wafers using an oxygen plasma[...]texto impreso
Pereira, L. ; Pereira, E. ; Cremades Rodríguez, Ana Isabel ; Piqueras de Noriega, Javier | Elsevier Science SA | 1996-08Flame grown diamond films on a molibdenium substrate are characterised by cathodoluminescence (CL), photoluminescence (PL), micro-Raman and scanning electron microscopy in the emissive mode. Different crystal habit regions grow with an annular s[...]texto impreso
Muñoz Noval, Álvaro ; Salas Colera, E. ; Bartolomé Izquierdo, Pablo ; Serrano, A. ; Castro, G. R. ; Ranchal Sánchez, Rocío | Elsevier Science SA | 2017-12-05We report on the evolution of the microstructure of Tb-Fe-Ga films deposited by co-sputtering from Tb_(33)Fe_(67) and Fe_(72)Ga_(28) targets. The sputtering power was fixed (90 W) in the Fe_(72)Ga_(28) whereas it was increased from 50 to 90 W in[...]
