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This paper presents cathodoluminescence, electrical and structural characteristics of (11-20)-oriented 4H-SiC substrates, aiming at determining properties of some extended defects. As-grown basal plane dislocations with the Burgers vector b = 1/[...]texto impreso
Hidalgo Alcalde, Pedro ; Ottaviani, L. ; Idrissi, H. ; Lancin, M. ; Martinuzzi, S. ; Pichaud, B. | E D P Sciences | 2004-07Silicon Carbide (SiC) is a wide band gap semiconductor, having opto-electronic properties that are suitable for many applications. Some structural defects due to crystal growth and/or doping technologies are commonly present in the substrates of[...]
