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By means of a contactless microwave phase shift technique, the minority carrier lifetime and surface recombination velocity were measured in multicrystalline silicon wafers containing iron and chromium. The bulk lifetime can be deduced, leading [...]texto impreso
FeB and CrB pair reassociation kinetics in imperfect Si controlled by contactless lifetime scan maps
The kinetics of "metal-acceptor" pairing in boron-doped multicrystalline samples are investigated by means of contactless lifetime measurement. The case of FeB and CrB pairs is discussed and the influence of extended defect is evidenced for FeB.[...]texto impreso
Ottaviani, L. ; Yakimov, E. ; Hidalgo Alcalde, Pedro ; Martinuzzi, S. | Trans Tech Publications Ltd | 2004Hydrogen is known to passivate donor and acceptor levels in SiC bulk, and also at the surface by forming bonds with Si atoms. Introduction of H atoms can then improve the electrical performance of Schottky diodes by reducing the metal-SiC interf[...]texto impreso
Hidalgo Alcalde, Pedro ; Ottaviani, L. ; Idrissi, H. ; Lancin, M. ; Martinuzzi, S. ; Pichaud, B. | E D P Sciences | 2004-07Silicon Carbide (SiC) is a wide band gap semiconductor, having opto-electronic properties that are suitable for many applications. Some structural defects due to crystal growth and/or doping technologies are commonly present in the substrates of[...]
