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Título:
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Defect structure of SiNx : H films and its evolution with annealing temperature
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Autores:
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Mártil de la Plaza, Ignacio ;
Prado Millán, Álvaro del
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Tipo de documento:
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texto impreso
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Editorial:
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American Institute of Physics, 2000-08-15
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Dimensiones:
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application/pdf
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Nota general:
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info:eu-repo/semantics/openAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Electricidad
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Materia = Ciencias: Física: Electrónica
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Tipo = Artículo
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Resumen:
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The structure of defects of SiNx:H films is investigated by electron-spin resonance. It is found that a relaxation process takes place at annealing temperatures below 600 degrees C for those compositions in which the nitrogen-to-silicon ratio is above the percolation threshold of the Si-Si bonds in the nitride lattice. The nature of this process is discussed and attributed to a thermally activated charge transfer between metastable defects. No such relaxation occurs in the films with a composition below the percolation threshold, possibly due to a positive correlation energy and a structural lack of flexibility. For higher annealing temperatures, an increase of the defect density is observed and associated with the thermal release of hydrogen. (C) 2000 American Institute of Physics. [S0021-8979(00)00516-8].
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En línea:
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https://eprints.ucm.es/id/eprint/26784/1/Martil%2C73libre.pdf
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