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Título:
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N-2 remote plasma cleaning of InP to improve SiNx : H/InP interface performance
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Autores:
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Mártil de la Plaza, Ignacio ;
González Díaz, Germán
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Tipo de documento:
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texto impreso
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Editorial:
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Pergamon-Elsevier Science Ltd., 2000-04
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Dimensiones:
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application/pdf
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Nota general:
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info:eu-repo/semantics/openAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Electricidad
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Materia = Ciencias: Física: Electrónica
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Tipo = Artículo
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Resumen:
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Cleaning of InP surfaces using electron cyclotron resonance (ECR) nitrogen plasmas has been studied. Electrical performance of Al/SiNx:H/InP structures has been analysed to determine the effect of the plasma cleaning. The SINx:H insulator layers are deposited at 200 degrees C using an ECR chemical vapour deposition technique. It is observed that a 30 s low-power (60 W) ECR N-2 plasma treatment of InP surface reduces the interface defects and improves the resistivity and breakdown held values of the SiNx:H. (C) 2000 Elsevier Science Ltd. All rights reserved.
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En línea:
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https://eprints.ucm.es/id/eprint/26801/1/Martil%2C77.pdf
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