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Título:
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Good quality Al/SiNx : H/InP metal-insulator-semiconductor devices obtained with electron cyclotron resonance plasma method
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Autores:
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Mártil de la Plaza, Ignacio ;
González Díaz, Germán ;
García, S. ;
Castán, E. ;
Dueñas, S. ;
Fernández, M.
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Tipo de documento:
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texto impreso
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Editorial:
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American Institute of Physics, 1998-01-01
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Dimensiones:
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application/pdf
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Nota general:
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info:eu-repo/semantics/openAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Electricidad
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Materia = Ciencias: Física: Electrónica
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Tipo = Artículo
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Resumen:
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We have obtained Al/SiNx:H/InP metal-insulator-semiconductor devices depositing SiNx:H thin films by the electron cyclotron resonance plasma method at 200 degrees C. The electrical properties of the structures were analyzed according to capacitance-voltage and deep level transient spectroscopy measurements. We deduce an inverse correlation between the insulator composition-the N/Si ratio-and the density of interface traps: those films with the maximum N/Si ratio (1.49) produce devices with the minimum trap density-2 x 10(12) cm(-2) eV(-1) at 0.42 eV. above the midgap. We explain the influence of film composition on the interface trap density in terms of a substitution of phosphorous vacancies at the InP surface, V-p, by N atoms coming from the insulator, N-Vp. The values obtained in our research for the interface trap distribution were similar to other published results for devices that use chemical and/or physical passivation processes of the InP surface prior to the deposition of the insulator.
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En línea:
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https://eprints.ucm.es/id/eprint/27066/1/Martil%2C99.pdf
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