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Título:
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Role of deep levels and interface states in the capacitance characteristics of all?sputtered CuInSe2/CdS solar cell heterojunctions
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Autores:
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Mártil de la Plaza, Ignacio ;
González Díaz, Germán ;
Sánchez Quesada, Francisco ;
Santamaría Sánchez-Barriga, Jacobo ;
Iborra, E.
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Tipo de documento:
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texto impreso
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Editorial:
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American Institute of Physics, 1989-04-15
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Dimensiones:
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application/pdf
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Nota general:
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info:eu-repo/semantics/openAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Electricidad
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Materia = Ciencias: Física: Electrónica
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Tipo = Artículo
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Resumen:
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All?sputtered CuInSe2/CdS solar cellheterojunctions have been analyzed by means of capacitance?frequency (C?F) and capacitance?bias voltage (C?V) measurements. Depending on the CuInSe2 layer composition, two kinds of heterojunctions were analyzed: type 1 heterojunctions (based on stoichiometric or slightly In?rich CuInSe2 layers) and type 2 heterojunctions (based on Cu?rich CuInSe2 layers). In type 1 heterojunctions, a 80?meV donor level has been found. Densities of interface states in the range 101 0–101 1 cm2?eV? 1 (type 1) and in the range 101 2–101 3 cm? 2?eV? 1 (type 2) have been deduced. On the other hand, doping concentrations of 1.6×101 6 cm? 3 for stoichiometric CuInSe2 (type 1 heterojunction) and 8×101 7 cm? 3 for the CdS (type 2 heterojunction) have been deduced from C?Vmeasurements.
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En línea:
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https://eprints.ucm.es/id/eprint/27153/1/Martil%2C126libre.pdf
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