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Título:
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Eu activation in beta-Ga_2O_3 MOVPE thin films by ion implantation
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Autores:
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Peres, M. ;
Nogales Díaz, Emilio ;
Méndez Martín, Bianchi ;
Lorenz, K. ;
Correira, M. R. ;
Monteiro, T. ;
Sedrine, N. Ben
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Tipo de documento:
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texto impreso
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Editorial:
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Electrochemical Society, 2019-03-06
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Dimensiones:
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application/pdf
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Nota general:
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cc_by
info:eu-repo/semantics/openAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Física de materiales
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Materia = Ciencias: Física: Física del estado sólido
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Tipo = Artículo
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Resumen:
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In this work, we have established the effects of Eu implantation and annealing on beta-Ga_2O_3 thin films grown by metal organic vapor phase epitaxy (MOVPE) on sapphire substrate. The study is based on the combined information from structural and optical techniques: X-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS), cathodoluminescence (CL), photoluminescence (PL), and photoluminescence excitation (PLE). The thin films were implanted with a fluence of 1 x 10^15 Eu.cm^-2 and annealed at 900 degrees C. Neither significant changes in peak width or position nor additional peaks related to Eu complexes were detected in the XRD 2 theta-omega scans. RBS results and SRIM simulation are in good agreement, revealing that no Eu diffusion to the surface occurs during annealing. For the used implantation/annealing conditions, the Eu ion penetration depth reached similar to 130 nm, with a maximum concentration at similar to 50 nm. Furthermore, CL and PL/PLE results evidenced the optical activation of the Eu^3+ in the beta-Ga_2O_3 host. The detailed study of the Eu^3+ intra-4f shell transitions revealed that at least one active site is created by the Eu implantation/annealing in beta-Ga_2O_3 thin films grown on sapphire. Independently of the beta-Ga_2O_3 film thickness, well controlled optical activation of implanted Eu was achieved.
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En línea:
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https://eprints.ucm.es/55073/1/MendezBianchi98libre%2BCC.pdf
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