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We present the epitaxial growth of Ge and Ge_(0.94)Sn_(0.06) layers with 1.4% and 0.4% tensile strain, respectively, by reduced pressure chemical vapor deposition on relaxed GeSn buffers and the formation of high-k/metal gate stacks thereon. Ann[...]texto impreso
Méndez González, Diego ; Laurenti, Marco ; Latorre, Alfonso ; Somoza, Álvaro ; Vázquez, Ana ; Negredo, Ana Isabel ; Lopez Cabarcos, Enrique ; Calderón, Oscar Gómez ; Melle Hernández, Sonia ; Rubio Retama, Jorge | Amer Chemical Soc. | 2017-03-23We present a sensor that exploits the phenomenon of upconversion luminescence to detect the presence of specific sequences of small oligonucleotides like miRNAs among others. The sensor is based on NaYF4:Yb,Er@SiO2 nanoparticles functionalized w[...]
