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Título:
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Influence of defects on diffusion length inhomogeneity in gaas-te wafers
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Autores:
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Castaldini, A. ;
Cavallini, A. ;
Fraboni, B ;
Piqueras de Noriega, Javier ;
Méndez Martín, Bianchi
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Tipo de documento:
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texto impreso
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Editorial:
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IOP publishing ltd, 1994
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Física de materiales
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Tipo = Sección de libro
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Resumen:
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Homogeneity, distribution and nature of defects in GaAs:Te wafers with different doping concentrations have been investigated by SPV (Surface PhotoVoltage) and EBIC (Electron Beam Induced Current) methods. The resulting radial distribution of the minority carrier diffusion length L across each wafer has been correlated with the profiles obtained for dislocation density and N-D-N-A. By comparing the present results with previous cathodoluminescence analyses (Mendez et al. 1988, Mendez et al. 1991), it is suggested that dislocations and dislocation related centres determine the L values.
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