Título:
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Influence of te concentration on the infrared cathodoluminescence of GaAs:Te wafers
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Autores:
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Méndez Martín, Bianchi ;
Piqueras de Noriega, Javier
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Tipo de documento:
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texto impreso
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Editorial:
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Amer Inst Physics, 1991-03-01
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Dimensiones:
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application/pdf
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Nota general:
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info:eu-repo/semantics/openAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Física de materiales
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Tipo = Artículo
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Resumen:
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Cathodoluminescence (CL) scanning electron microscopy has been used to investigate the nature and distribution of defects involved in the infrared emission of GaAs:Te wafers. Spectral and CL-contrast changes as a function of doping level have been found. Profiles of infrared CL intensity across the wafers show an inverted U shape.
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En línea:
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https://eprints.ucm.es/id/eprint/25088/1/MendezBianchi83libre.pdf
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