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Carcelen, V. ; Hidalgo Alcalde, Pedro ; Rodríguez Fernández, J. ; Dieguez, E. | American Institute of Physics | 2010-05-01The II-VI compound semiconductor cadmium zinc telluride (CZT) is very useful for room temperature radiation detection applications. In the present research, we have successfully grown Bi doped CZT single crystals with two different zinc concentr[...]texto impreso
Carcelen, V. ; Hidalgo Alcalde, Pedro ; Rodríguez Fernández, J. ; Dieguez, E. | American Institute of Physics | 2010-05-01The II-VI compound semiconductor cadmium zinc telluride (CZT) is very useful for room temperature radiation detection applications. In the present research, we have successfully grown Bi doped CZT single crystals with two different zinc concent[...]texto impreso
Influence of thermal environments on the growth of bulk cadmium zinc telluride (CZT) single crystals
Carcelen, V. ; Vijayan, N. ; Rodríguez Fernández, J. ; Hidalgo Alcalde, Pedro ; Piqueras de Noriega, Javier ; Sochinskii, N. V. ; Pérez, J. M. ; Dieguez, E. | Elsevier Science BV | 2009-02-15The II-VI compound semiconductor crystal cadmium zinc telluride (CZT) is very important in the field of room-temperature radiation detectors and medical imaging applications. In the present study, bulk CZT single crystal has been grown by (i) os[...]texto impreso
Rodríguez Fernández, J. ; Carcelen, V. ; Hidalgo Alcalde, Pedro ; Vijayan, N. ; Piqueras de Noriega, Javier ; Sochinskii, N. V. ; Pérez, J. M. ; Dieguez, E. | Amer Inst Physics | 2009-08-15Cadmium zinc telluride, CdZnTe, bulk single crystals doped with 10^19 at./cm^3 of indium in the initial melt were grown by vertical Bridgman technique. The samples were investigated by energy dispersive spectroscopy, cathodoluminiscence (CL), an[...]texto impreso
Rodríguez Fernández, José ; Carcelen, V. ; Hidalgo Alcalde, Pedro ; Vijayan, N. ; Piqueras de Noriega, Javier ; Sochinskii, N. V. ; Pérez, J. M. ; Dieguez, E. | Institute of Physics | 2004-01-21The cathodoluminescence (CL) technique is used to analyse the radiative recombination properties of four distinct silicon carbide (SiC) samples: a 6H-SiC n^+ -type Lely wafer, two off-axis 4H-SiC epitaxial layers of n type and p type, and a (11 [...]
