Título:
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Sub-bandgap absorption in Ti implanted Si over the Mott limit
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Autores:
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Mártil de la Plaza, Ignacio ;
González Díaz, Germán ;
Olea Ariza, Javier ;
Prado Millán, Álvaro del
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Tipo de documento:
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texto impreso
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Editorial:
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American Institute of Physics, 2011-06-01
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Dimensiones:
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application/pdf
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Nota general:
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info:eu-repo/semantics/openAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Electricidad
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Materia = Ciencias: Física: Electrónica
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Tipo = Artículo
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Resumen:
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We have analyzed the structural and optical properties of Si implanted with very high Ti doses and subsequently pulsed-laser melted (PLM). After PLM, all samples exhibit an abrupt and roughly uniform, box-shaped Ti profile, with a concentration around 2 x 10(20) cm(-3), which is well above the Mott limit, within a 150 nm thick layer. Samples PLM-annealed at the highest energy density (1.8 J/cm(2)) exhibit good lattice reconstruction. Independent of the annealing energy density, in all of the samples we observe strong sub-bandgap absorption, with absorption coefficient values between 4 x 10(3) and 10(4) cm(-1). These results are explained in terms of the formation of an intermediate band (IB) originated from the Ti deep levels.
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En línea:
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https://eprints.ucm.es/id/eprint/25844/1/Martil%2C14libre.pdf
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