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Rezaei, Mohammadreza ; Martín Holgado, Pedro ; Morilla, Yolanda ; Franco Peláez, Francisco Javier ; Fabero Jiménez, Juan Carlos ; Mecha López, Hortensia ; Puchner, Helmut ; Hubert, Guillaume ; Clemente Barreira, Juan Antonio | IEEE-Inst Electrical Electronics Engineers Inc | 2020-10This article presents an experimental study on the sensitivity of a commercial-off-the-shelf (COTS) bulk 65-nm static random access memory (SRAM) under 15.6 MeV proton irradiation when powered up at ultralow bias voltage. Tests were run on stand[...]texto impreso
Clemente Barreira, Juan Antonio ; Hubert, Guillaume ; Franco Peláez, Francisco Javier ; Vila, Francesca ; Baylac, Maud ; Puchner, Helmut ; Velazco, Raoul ; Mecha López, Hortensia | IEEE-Inst Electrical Electronics Engineers Inc | 2017-08-01This paper presents the characterization of the sensitivity to 14-MeV neutrons of a Commercial Off-The-Shelf (COTS) 90-nm Static Random Access Memories (SRAMs) manufactured by Cypress Semiconductor, when biased at ultra low voltage. Firstly, exp[...]texto impreso
Clemente Barreira, Juan Antonio ; Hubert, Guilaume ; Fraire, Juan ; Franco Peláez, Francisco Javier ; Villa, Francesca ; Rey, Solenne ; Baylac, Maud ; Puchner, Helmut ; Mecha, Hortensia ; Velazco, Raoul | IEEE-Inst Electrical Electronics Engineers Inc | 2018-02-01This paper presents a SEU sensitivity characterization at ultra-low bias voltage of three generations of COTS SRAMs manufactured in 130 nm, 90 nm and 65 nm CMOS processes. For this purpose, radiation tests with 14.2 MeV neutrons were performed f[...]texto impreso
Clemente Barreira, Juan Antonio ; Franco Peláez, Francisco Javier ; Villa, Francesca ; Rey, Sole ; Baylac, Maud ; Mecha López, Hortensia ; Agapito Serrano, Juan Andrés ; Puchner, Helmut ; Hubert, Guillaume ; Velazco, Raoul | IEEE-Inst Electrical Electronics Engineers Inc | 2015-09-18This paper presents an approach to discern MCUs from SEUs in SRAM memories. Experiments involving radiation tests with 14-MeV neutrons on two successive generations (130 and 90 nm) of Cypress devices are presented.texto impreso
Clemente Barreira, Juan Antonio ; Franco Peláez, Francisco Javier ; Villa, Francesca ; Baylac, Maud ; Rey, Solenne ; Mecha López, Hortensia ; Agapito Serrano, Juan Andrés ; Puchner, Helmut ; Hubert, Guillaume ; Velazco, Raoul | IEEE | 2016-08Recently, the occurrence of multiple events in static tests has been investigated by checking the statistical distribution of the difference between the addresses of the words containing bitflips. That method has been successfully applied to Fie[...]texto impreso
Franco Peláez, Francisco Javier ; Clemente Barreira, Juan Antonio ; Baylac, Maud ; Rey, Solenne ; Villa, Francesca ; Mecha López, Hortensia ; Agapito Serrano, Juan Andrés ; Puchner, Helmut ; Hubert, Guillaume ; Velazco, Raoul | IEEE-Inst Electrical Electronics Engineers Inc | 2017-08-01This paper addresses a well-known problem that occurs when memories are exposed to radiation: the determination if a bitflip is isolated or if it belongs to a multiple event. As it is unusual to know the physical layout of the memory, this paper[...]
