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Título:
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Interfacial effects on the tunneling magnetoresistance in La_(0.7)Sr_(0.3)MnO_(3)/MgO/Fe tunneling junctions
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Autores:
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Galceran, R. ;
Balcells, Ll. ;
Martínez-Boubeta, C. ;
Bozzo, B. ;
Cisneros-Fernández, J. ;
Mata, M. de la ;
Magén, C. ;
Arbiol, J. ;
Tornos, J. ;
Cuéllar Jiménez, Fabián Andrés ;
Sefrioui, Zouhair ;
Cebollada, A. ;
Golmar, F. ;
Huesos, L.E. ;
Casanova, F. ;
Santamaría Sánchez-Barriga, Jacobo ;
Martínez, B.
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Tipo de documento:
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texto impreso
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Editorial:
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American Physical Society, 2015-09-16
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Dimensiones:
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application/pdf
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Nota general:
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info:eu-repo/semantics/openAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Electricidad
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Materia = Ciencias: Física: Electrónica
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Tipo = Artículo
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Resumen:
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We report on magnetotransport properties on La_(0.7)Sr_(0.3)MnO_(3)/MgO/Fe tunnel junctions grown epitaxially on top of (001)-oriented SrTiO_(3) substrates by sputtering. It is shown that the magnetoresistive response depends critically on the MgO/Fe interfacial properties. The appearance of an FeOX layer by the interface destroys the 1 symmetry filtering effect of the MgO/Fe system and only a small negative tunneling magnetoresistance (TMR) (? ?3 %) is measured. However, in annealed samples a switchover from positive TMR (? +25% at 70 K) to negative TMR (? ?1 %) is observed around 120 K. This change is associated with the transition from semiconducting at high T to insulating at low T taking place at the Verwey transition (TV ? 120 K) in Fe3O4, thus suggesting the formation of a very thin slab of magnetite at the MgO/Fe interface during annealing treatments. These results highlight the relevance of interfacial properties on the tunneling conduction process and how it can be substantially modified through appropriate interface engineering.
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En línea:
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https://eprints.ucm.es/33751/1/Santamar%C3%ADaJ%2001%20libre.pdf
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